ANTONELLA PARISINI
Born 23 October 1959, Parma, Italy, Italian citizenship, married, a son
Associate Professor, Department of Physics, University of Parma
EMPLOYMENTS
- From December 16, 2004: permanent employee as Associated Professor of the University of Parma (Physical Department, Engineering Faculty), confirmation of the position after three years. SSD: BO3X Structure of the Matter (actual PHYS03/A)
- From May 16, 1990: permanent employee as Researcher of the University of Parma (Physical Department, Engineering Faculty), confirmation of the position after three years. SSD: BO3X (actual FIS03) Structure of the Matter
EDUCATION
- 1989 Ph.D. Diploma in Physics University of Parma
- 1985 Degree in Physics (Solid State) at the University of Parma (110/110 cum laude)
- 1978 Diploma Diploma at the Scientific High School Guglielmo Marconi, Parma
CURRENT SCIENTIFIC COLLABORATIONS
- Sorbonne Universitè, Paris, France - Dr. H. J. von Bardeleben; EPR investigation on Ga₂O₃
- Helmholtz Zentrum, Berlin, Germany - Dr. T. Dittrich; SPV investigation on Ga₂O₃
- Hungarian Academy of Sciences, Budapest, Hungary - Dr. I. Cora; TEM investigation on Ga₂O₃
- Paul Drude Institute, Berlin, Germany - Dr. O. Bierwagen; MBE deposition of Ga₂O₃
In Italy, mainly:
- CNR-IMEM, Parma, Italy - Dr. M. Bosi, Dr. L. Seravalli; epitaxial deposition of Ga₂O₃; and Dr.
Francesca Rossi: CL measurement on Ga₂O₃; Dr. Enos Gombia and Dr. Matteo Bronzoni: DLTS ;
measurements on Ga₂O₃; Dr. Francesco Bissoli: photolithographic design of Ga₂O₃ based devices
- University of Cagliari, Italy - Prof. V. Fiorentini, Dr. P. Alippi; DFT calculations on Ga₂O₃
- University of Padova, Italy - Prof. A. Gasparotto; SIMS measurements in Ga₂O₃
CONTRIBUTION TO DEVELOPMENT OF TECHNOLOGIES, MATERIALS, EQUIPMENTS
During the scientific activity carried out, a decisive contribution was made to the preparation and development of the "Semiconductors" Laboratory of the Physics Complex of the University of Parma, both by participating extensively in the assembly and use of the aforementioned experimental systems, and by developing models and calculations for the analysis and adaptation of experimental data. Particularly:
I) development and management of the low-field Hall Effect measurement system operating in the temperature range 10 - 600 K, in the dark and under wavelength-selective optical excitation
II) Development of models and computational codes for a self-consistent analysis of carrier mobility and density as a function of temperature
III) Setting up of a system for high magnetic field transport measurements, with a superconducting magnet operating in the T range from 1.5 to 300 K, up to 12 Tesla
IV) Development of models and computational codes for the investigation of quantum transport phenomena
V) Setting up of a space charge spectroscopy measurement system (admission spectroscopy, capacitance voltage measurements) operating in the temperature range 10-300 K with relative data analysis in the case of application of the technique to different systems (inorganic semiconductors or soft matter)
V) Setting up of a measurement system of optical absorption and photoelectric properties in the near IR-visible spectral range, operating in the temperature range 10-300 K
VI) Study of planar heterojunctions with admittance/impedance spectroscopy
ORIGINAL ASPECTS OF THE RESEARCH
(i) Analysis of the electronic-transport properties of III-V ternary compounds, influenced by the presence of the DX center in coexistence with the shallow levels introduced by the donor impurity
(ii) Study of the magnetotransport coefficients in Te-GaSb both at low magnetic fields, to highlight negative magnetoresistance effects (weak localization), and at high magnetic fields up to the extreme quantum limit
(iii) Study of the transport through localized states in proximity of the Mott transition and of the semiconductor-to-insulator transition induced by the magnetic field
(iv) Measurement and analysis of the parallel transport of a 2D electron gas in multiple quantum well structures and study of the optical properties of the structures
(v) Photoelectric and admittance spectroscopy investigation of multiple quantum well structures embedded in p-i-n diodes, as a function of temperature and frequency of optical excitation
(vi) Measurements and analysis of the perpendicular transport through a multiple quantum well structure embedded in the intrinsic region of a p-i-n diode, with the evidence of tunneling effects
(vii) Study of structural disorder, such as ordering effects or 1D correlated disorder in superlattices
(viii) Study of the electronic transport properties in 4H-SiC implanted layers, and Ga₂O₃ epitaxial layers, related to the conduction mechanisms both in extended states (valence and conduction bands), and in localized states (3D and 2D Variable Range Hopping)
(ix) Understanding of the electrochemical mechanisms underlying the functioning of organic memristive structures
(x) Study of electrically active defects in Ga₂O₃ with photoelectric and photocapacitive methods
(xi) Study of planar inorganic and hybrid heterojunctions, in the dark and under light, with electrical and photoelectric measurements and with admittance spectroscopy
