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Born 23 October 1959, Parma, Italy, Italian citizenship, married, a son.
Associate Professor, Department of Physics, University of Parma

- From December 16, 2004: permanent employee as Associated Professor of the University of Parma (Physical Department, Engineering Faculty), confirmation of the position after three years. SSD: BO3X (actual FIS03) Structure of the Matter
- From May 16, 1990: permanent employee as Researcher of the University of Parma (Physical Department, Engineering Faculty), confirmation of the position after three years. SSD: BO3X (actual FIS03) Structure of the Matter

- 1989 Ph.D. Diploma in Physics University of Parma
- 1985 Degree in Physics (Solid State) at the University of Parma (110/110 cum laude)
- 1978 Diploma Diploma at the Scientific High School Guglielmo Marconi, Parma

The research activity, mainly of experimental character, is documented by over 100 publications in international journals and numerous participations in international conferences; it mainly concerns the study of the electronic properties of semiconductor compounds, predominantly thin epitaxial films (MBE and MOVPE) or doped for ion implantation. This activity has been developed within several research contracts and projects in collaboration with foreign research centers and national private and public laboratories, in particular IMEM-CNR Institute of Parma and IMM-CNR of Bologna. The investigation was mainly performed through transport measurements, at low and high magnetic field, optical absorption, photoluminescence, photoelectrical measurements and a significant theoretical activity of data analysis.
Currently the research is focused on wide bandwidth semiconductors for applications in power electronics and UV-radiation detection, with particular attention to semiconductor oxides (polytypes ε- and β- of Ga2O3) and SiC (especially 4H polytype). The study is conducted with particular deepening of photoelectric and transport electrical properties (conduction both in extended states and localized states, and near the semiconductor-metal transition).
At the same time, gel-based polymers are studied, aimed at realizing bio-integrated devices with memristive properties. By memristor means a passive element of a circuit that has memory of the current that has passed through it. Since neuronal systems have memristive properties, biocompatible systems that simulate the behavior of synapses open a new electronic frontier. Currently, the study is conducted through electrical current-voltage measurements and admittance spectroscopy on polyaniline (PANI) and doped polyethylene oxide (PEO).
Previous activity has instead focused on the study of epitaxial layers of III-V semiconductors, both with 3D electronic properties and with low-dimensional (2D) structures aimed at the manufacture of electronic and optoelectronic devices (eg MQW solar cells).
Furthermore, basic aspects of solid state physics have been widely investigated, such as (i) phenomenologies connected with the presence of shallow / deep impurities (in particular: the DX center), (ii) structural disorders (correlation effects of disorder in superlattices, ordering phenomena), (iii) transport phenomena in multiple quantum holes (both in parallel and perpendicular to wells), (iv) quantum magneto-transport and effects of weak localization.

Several short periods were held at the École polytechnique fédérale de Lausanne (EPFL), where photoluminescence measurements were performed on GaAs/AlGaAs multi-quantum-well structures.

The didactical activity is very wide, strongly polarized on basic courses, both for Degree Courses of the Faculty of Engineering (mainly for the Degree in Civil Engineering) and CL of the Faculty of Mathematical, Physical and Natural Sciences (Degree in Science and Technology of the Materials, and Degree in Physics), and more recently for the Degree in Physics of the Department of Mathematics, Physics and Informatics.
Currently, it is also carried out activity for Master's Degree courses in Physics, and, now and occasionally in the past, also for the Ph.D. in Physics and in Materials Science and Technology. Various didactic seminars.
She has always collaborated in carrying out various activities to support teaching and dissemination, and starting from a.a. 2015-16 she is Referent for the activity of Alternating School-Work in Physics.

- 2017: member of the Organizer Committee of the Worshop: “2nd International Workshop on Ga2O3 and related Compounds” (IWGO2017-Parma, 12-15 september 2017, Parma).
-1999-2000: scientific responsible of the Operative Unity of Parma within the CNR Finalized Project “MADESS II”), working on the research line “Study of MOVPE grown InGaP/GaAs and AlGaAs/GaAs heterostructures finalized to the development of high efficiency photovoltaic converters for spatial use. Analys of the transport properties of epitaxial layers of InGaP on GaAs”
-1994: member of the Organizer Committee of the Congress: “2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies” (EXMATEC’94 -Parma, May 18-20, 1994).

A significant contribution was given to the set up and development of the “Semiconductor Lab” of the Physical building of the University of Parma, by taking part to the assembling and employment of the mentioned experimental systems and by working out models and calculations for the analysis and the fitting of the experimental data. In particular:
I) Set up of the low-field Hall-effect facility working in the T range 10 - 600 K, in the dark and under spectroscopic optical excitation
II) Development of the models and the calculation routines for a self-consistent analysis of mobility and carrier density as a function of the temperature
III) Set up of a facility for transport measurements at high magnetic fields (superconductor magnet), working in the T range 1.5 - 300 K, till to 12 Tesla
IV) Development of the models and the calculation routines for quantum transport investigation
V) Set up of a facility for space charge spectroscopy (admittance spectroscopy, capacitance-voltage measurements) operating in the temperature range 10-300 K and data analysis routines for studies in different materials, semiconductors and soft matter
V) Set up of a facility for optical absorption (visible-NIR) and photoelectrical measurements as a function of the temperature between 10 and 300 K in the near IR-visible spectral range

(i) Analysis of the transport properties of III-V ternary compounds in presence of the DX center, coexisting with effective mass states donors
(ii) Investigation of the magneto-transport coefficients in Te-GaSb, both at low magnetic fields, to point out negative magneto-resistance effects (weak localization), and at high fields, till to reach the extreme quantum limit.
(iii) Study of the transport into localized states in proximity of the Mott transition, and of the semiconductor-to-insulator transition induced by the magnetic field.
(iv) Measurement and analysis of parallel transport of a 2D electron gas in multi-quantum-well structures and study of the optical properties of the structures
(v) Photoelectrical and admittance spectroscopy investigation of multi-quantum-well structures embedded in p-i-n diodes, as a function of temperature and frequency of the optical excitation
(vi) Measurements and analysis of perpendicular transport across a multi-quantum-well structure embedded in the intrinsic region of a p-i-n diode, evidencing tunneling effects.
(vii) Study of structural disorder, as ordering effects and 1D-correlated disorder in superlattices
(viii) More in general, study and interpretation of electrical measurements on bulk inorganic semiconductors in presence of defects and traps.
(ix) Study of the transport properties in 4H-SiC implanted layers, and epitaxial Ga2O3 layers, related to conduction mechanisms either in extended states (valence and conduction bands) and in localized states (3D and 2D Variable Range Hopping)
(x) Understanding of the electrochemical mechanisms underlying the functioning of organic memristive structures

Anno accademico di erogazione: 2021/2022

Anno accademico di erogazione: 2020/2021

Anno accademico di erogazione: 2019/2020

Anno accademico di erogazione: 2018/2019

Anno accademico di erogazione: 2017/2018

Anno accademico di erogazione: 2016/2017

Anno accademico di erogazione: 2015/2016

Anno accademico di erogazione: 2014/2015

Anno accademico di erogazione: 2013/2014


  • Second cycle degree PHYSICS A.Y. 2021/2022
  • Second cycle degree PHYSICS A.Y. 2020/2021
  • Second cycle degree PHYSICS A.Y. 2019/2020
  • Second cycle degree PHYSICS A.Y. 2018/2019
  • Second cycle degree PHYSICS A.Y. 2017/2018
  • Second cycle degree Physics A.Y. 2016/2017

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