ANTONELLA PARISINI
Born 23 October 1959, Parma, Italy, Italian citizenship, married, a son
Associate Professor, Department of Physics, University of Parma
EMPLOYMENTS
- From December 16, 2004: permanent employee as Associated Professor of the University of Parma (Physical Department, Engineering Faculty), confirmation of the position after three years. SSD: BO3X (actual FIS03) Structure of the Matter
- From May 16, 1990: permanent employee as Researcher of the University of Parma (Physical Department, Engineering Faculty), confirmation of the position after three years. SSD: BO3X (actual FIS03) Structure of the Matter
EDUCATION
- 1989 Ph.D. Diploma in Physics University of Parma
- 1985 Degree in Physics (Solid State) at the University of Parma (110/110 cum laude)
- 1978 Diploma Diploma at the Scientific High School Guglielmo Marconi, Parma
RESEARCH ACTIVITY
The research activity, mainly of experimental character, is documented by over 100 publications in international journals and numerous participations in international conferences; it mainly concerns the study of the electronic properties of semiconductor compounds, predominantly thin epitaxial films (MBE and MOVPE) or doped for ion implantation. This activity has been developed within several research contracts and projects in collaboration with foreign research centers and national private and public laboratories, in particular IMEM-CNR Institute of Parma and IMM-CNR of Bologna. The investigation was mainly performed through transport measurements, at low and high magnetic field, optical absorption, photoluminescence, photoelectrical measurements and a significant theoretical activity of data analysis.
Currently the research is focused on wide bandwidth semiconductors for applications in power electronics and UV-radiation detection, with particular attention to semiconductor oxides (polytypes ε- and β- of Ga2O3) and SiC (especially 4H polytype). The study is conducted with particular deepening of photoelectric and transport electrical properties (conduction both in extended states and localized states, and near the semiconductor-metal transition).
At the same time, gel-based polymers are studied, aimed at realizing bio-integrated devices with memristive properties. By memristor means a passive element of a circuit that has memory of the current that has passed through it. Since neuronal systems have memristive properties, biocompatible systems that simulate the behavior of synapses open a new electronic frontier. Currently, the study is conducted through electrical current-voltage measurements and admittance spectroscopy on polyaniline (PANI) and doped polyethylene oxide (PEO).
Previous activity has instead focused on the study of epitaxial layers of III-V semiconductors, both with 3D electronic properties and with low-dimensional (2D) structures aimed at the manufacture of electronic and optoelectronic devices (eg MQW solar cells).
Furthermore, basic aspects of solid state physics have been widely investigated, such as (i) phenomenologies connected with the presence of shallow / deep impurities (in particular: the DX center), (ii) structural disorders (correlation effects of disorder in superretoli , ordering phenomena), (iii) transport phenomena in multiple quantum holes (both in parallel and perpendicular to wells), (iv) quantum magneto-transport and effects of weak localization.
